PDTC123JE,115 by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PDTC123JE,115
Description	NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; Transistor Application: SWITCHING;
Datasheet	PDTC123JE,115 Datasheet
In Stock	1,671

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.1 A
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN RESISTOR
Transistor Element Material:	SILICON
Transistor Application:	SWITCHING
Sub-Category:	BIP General Purpose Small Signal
Surface Mount:	YES
Terminal Finish:	TIN
No. of Terminals:	3
Maximum Power Dissipation (Abs):	.15 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Maximum Operating Temperature:	150 Cel
Maximum Power Dissipation Ambient:	.15 W
Moisture Sensitivity Level (MSL):	1
Other Names:	568-11247-6 2156-PDTC123JE115-NXTR PDTC123JE T/R 568-11247-1 934051590115 PDTC123JE T/R-ND 568-11247-2 PDTC123JE,115-ND
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	100
JESD-609 Code:	e3
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	50 V
Additional Features:	BUILT-IN BIAS RESISTOR RATIO IS 21.36
Maximum Collector-Base Capacitance:	3.5 pF
Peak Reflow Temperature (C):	260
Maximum VCEsat:	.3 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,671	-	-

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