NXP Semiconductors - PHB1N60T/R

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PHB1N60T/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHB1N60T/R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 50 W; Package Shape: RECTANGULAR; Avalanche Energy Rating (EAS): 45 mJ;
Datasheet PHB1N60T/R Datasheet
In Stock896
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.9 A
Maximum Pulsed Drain Current (IDM): 7.6 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 2
Maximum Power Dissipation (Abs): 50 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: 6 ohm
Avalanche Energy Rating (EAS): 45 mJ
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 600 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 1.9 A
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