NXP Semiconductors - PHB50N06LTT/R

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PHB50N06LTT/R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHB50N06LTT/R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation Ambient: 125 W; Transistor Application: SWITCHING; No. of Terminals: 2;
Datasheet PHB50N06LTT/R Datasheet
In Stock3,604
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 175 ns
Maximum Drain Current (ID): 50 A
Maximum Pulsed Drain Current (IDM): 200 A
Surface Mount: YES
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 190 ns
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 175 Cel
Case Connection: DRAIN
Maximum Power Dissipation Ambient: 125 W
Maximum Drain-Source On Resistance: .024 ohm
Avalanche Energy Rating (EAS): 80 mJ
Maximum Feedback Capacitance (Crss): 200 pF
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
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