PHB87N03LT by NXP Semiconductors | Transistors

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Manufacturer	NXP Semiconductors
Manufacturer's Part Number	PHB87N03LT
Description	N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; No. of Terminals: 2; Terminal Form: GULL WING; Package Shape: RECTANGULAR;
Datasheet	PHB87N03LT Datasheet
In Stock	2,305

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	195 ns
Maximum Drain Current (ID):	75 A
Maximum Pulsed Drain Current (IDM):	240 A
Surface Mount:	YES
No. of Terminals:	2
Terminal Position:	SINGLE
Package Style (Meter):	SMALL OUTLINE
Maximum Turn Off Time (toff):	260 ns
JESD-30 Code:	R-PSSO-G2
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	175 Cel
Case Connection:	DRAIN
Maximum Power Dissipation Ambient:	142 W
Maximum Drain-Source On Resistance:	.0105 ohm
Avalanche Energy Rating (EAS):	200 mJ
Polarity or Channel Type:	N-CHANNEL
Minimum DS Breakdown Voltage:	25 V
Qualification:	Not Qualified
Additional Features:	LOGIC LEVEL COMPATIBLE

Pricing (USD)

Qty.	Unit Price	Ext. Price
2,305	-	-

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