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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | PHC21025-TAPE-13 |
Description | N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Turn On Time (ton): 40 ns; Maximum Drain Current (ID): 3.5 A; Maximum Power Dissipation Ambient: 4 W; |
Datasheet | PHC21025-TAPE-13 Datasheet |
In Stock | 1,560 |
NAME | DESCRIPTION |
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Package Body Material: | PLASTIC/EPOXY |
Configuration: | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 40 ns |
Maximum Drain Current (ID): | 3.5 A |
Maximum Pulsed Drain Current (IDM): | 14 A |
Polarity or Channel Type: | N-CHANNEL AND P-CHANNEL |
Surface Mount: | YES |
No. of Terminals: | 8 |
Minimum DS Breakdown Voltage: | 30 V |
Qualification: | Not Qualified |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
Maximum Turn Off Time (toff): | 140 ns |
JESD-30 Code: | R-PDSO-G8 |
No. of Elements: | 2 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Power Dissipation Ambient: | 4 W |
Maximum Drain-Source On Resistance: | .1 ohm |