NXP Semiconductors - PHD21N06LT,118

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PHD21N06LT,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHD21N06LT,118
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Additional Features: LOGIC LEVEL COMPATIBLE; Case Connection: DRAIN;
Datasheet PHD21N06LT,118 Datasheet
In Stock380
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 19 A
Maximum Pulsed Drain Current (IDM): 76 A
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 2
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .075 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 34 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
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