NXP Semiconductors - PHKD3NQ10T,518

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PHKD3NQ10T,518 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHKD3NQ10T,518
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 3 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
Datasheet PHKD3NQ10T,518 Datasheet
In Stock754
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3 A
Maximum Drain Current (Abs) (ID): 3 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 2
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