NXP Semiconductors - PHN1015

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PHN1015 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHN1015
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
Datasheet PHN1015 Datasheet
In Stock533
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 10 A
Maximum Pulsed Drain Current (IDM): 40 A
Sub-Category: FET General Purpose Powers
Surface Mount: YES
No. of Terminals: 8
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G8
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .018 ohm
JEDEC-95 Code: MS-012AA
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): 10 A
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