NXP Semiconductors - PHN210,118

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PHN210,118 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHN210,118
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 3.4 A;
Datasheet PHN210,118 Datasheet
In Stock3,817
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 2 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3.4 A
Maximum Drain Current (Abs) (ID): 3.4 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au)
JESD-609 Code: e4
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