NXP Semiconductors - PHT6N06T/T3

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PHT6N06T/T3 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PHT6N06T/T3
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Avalanche Energy Rating (EAS): 15 mJ; Maximum Pulsed Drain Current (IDM): 22 A;
Datasheet PHT6N06T/T3 Datasheet
In Stock99
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 15 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 5.5 A
Maximum Pulsed Drain Current (IDM): 22 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
No. of Terminals: 4
Minimum DS Breakdown Voltage: 55 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G4
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Additional Features: ESD PROTECTED
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .15 ohm
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