NXP Semiconductors - PIMZ2/DG,115

  1. Home
  2. NXP Semiconductors - PIMZ2/DG,115
PIMZ2/DG,115 by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PIMZ2/DG,115
Description NPN AND PNP; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .15 A; Maximum Operating Temperature: 150 Cel;
Datasheet PIMZ2/DG,115 Datasheet
In Stock880
NAME DESCRIPTION
Nominal Transition Frequency (fT): 100 MHz
Maximum Collector Current (IC): .15 A
Maximum Power Dissipation (Abs): .3 W
Maximum Operating Temperature: 150 Cel
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 120
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
880 - -

Popular Products

Category Top Products

2N3906 by Samsung

2N3906

Samsung

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
BC847-C by Infineon Technologies

BC847-C

Infineon Technologies

BC847-C by Infineon Technologies is a NPN BJT transistor with hFE of 420, fT of 250 MHz, and IC of 0.1 A. It is used in amplifier applications due to its max VCE of 45V and operating temp of 150°C. This surface-mount transistor has a Gull Wing terminal form in a small outline package.
MMBT3906 by Nte Electronics

MMBT3906

Nte Electronics

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .2 A; Transistor Application: AMPLIFIER;
2N3906 by Vishay Sprague

2N3906

Vishay Sprague

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Terminal Position: BOTTOM; Package Style (Meter): CYLINDRICAL;
BC817-25 by Surge Components

BC817-25

Surge Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;
BC547BBU by Fairchild Semiconductor

BC547BBU

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
2N2219A by Central Semiconductor

2N2219A

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .8 A;
2N2219A by Tt Electronics Plc

2N2219A

Tt Electronics Plc

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; Terminal Position: BOTTOM;
2N2222A by Micro Commercial Components

2N2222A

Micro Commercial Components

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; JESD-609 Code: e0;
2N3904TF by Onsemi

2N3904TF

Onsemi

2N3904TF by Onsemi is a NPN bipolar junction transistor with max. collector-emitter voltage of 40V and max. collector current of 0.2A. It has a min. DC current gain of 30, making it suitable for switching applications with a nominal transition frequency of 300MHz. The package style is cylindrical with matte tin terminal finish, ideal for through-hole mounting in various electronic circuits.
2N3906 by Kodenshi Auk

2N3906

Kodenshi Auk

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .2 A;
JANTX2N2907AUATR by Microchip Technology

JANTX2N2907AUATR

Microchip Technology

Small Signal Bipolar Transistors; JESD-609 Code: e0; Terminal Finish: Tin/Lead (Sn/Pb);
BC847B by General Semiconductor

BC847B

General Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC556BTF by Fairchild Semiconductor

BC556BTF

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A;
2N3906 by NXP Semiconductors

2N3906

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;
2N2222AUB by Optek Technology

2N2222AUB

Optek Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SBC807-40LT1G by Onsemi

SBC807-40LT1G

Onsemi

SBC807-40LT1G by Onsemi is a PNP BJT transistor for switching applications. It has VCEsat of 0.7V, hFE of 250, and IC of 0.5A. With a max operating temperature of 150°C, it is ideal for small outline packages in automotive electronics.
2N2219A by Baneasa S A

2N2219A

Baneasa S A

Small Signal Bipolar Transistors; Configuration: SINGLE; Surface Mount: NO; JESD-30 Code: O-MBCY-W3; Package Body Material: METAL; Terminal Form: WIRE;
BC547CTFR by Fairchild Semiconductor

BC547CTFR

Fairchild Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
ULN2803AFWG(5,EL,M) by Toshiba

ULN2803AFWG(5,EL,M)

Toshiba

Toshiba's ULN2803AFWG(5,EL,M) is an NPN BJT with 8 Darlington banks. It has a hFE of 1000, VCE of 50V, and IC of 0.5A. Ideal for switching applications, this surface-mount transistor features built-in diodes and resistors in a small outline package.