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Manufacturer | NXP Semiconductors |
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Manufacturer's Part Number | PMBFJ309-T |
Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 25 V; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Package Body Material: PLASTIC/EPOXY; |
Datasheet | PMBFJ309-T Datasheet |
In Stock | 4,458 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Configuration: | SINGLE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | JUNCTION |
Transistor Application: | AMPLIFIER |
Surface Mount: | YES |
Terminal Finish: | Tin (Sn) |
No. of Terminals: | 3 |
Terminal Position: | DUAL |
Package Style (Meter): | SMALL OUTLINE |
JESD-30 Code: | R-PDSO-G3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | GULL WING |
Operating Mode: | DEPLETION MODE |
Highest Frequency Band: | VERY HIGH FREQUENCY BAND |
Maximum Operating Temperature: | 150 Cel |
Moisture Sensitivity Level (MSL): | 1 |
Maximum Feedback Capacitance (Crss): | 2.5 pF |
JEDEC-95 Code: | TO-236AB |
Polarity or Channel Type: | N-CHANNEL |
JESD-609 Code: | e3 |
Minimum DS Breakdown Voltage: | 25 V |
Qualification: | Not Qualified |
Additional Features: | LOW NOISE |