NXP Semiconductors - PMDPB55XP

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PMDPB55XP by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMDPB55XP
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Reference Standard: IEC-60134; Terminal Form: NO LEAD; Transistor Application: SWITCHING;
Datasheet PMDPB55XP Datasheet
In Stock1,864
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.4 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Reference Standard: IEC-60134
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .07 ohm
Moisture Sensitivity Level (MSL): 1
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