NXP Semiconductors - PMDPB65UP

  1. Home
  2. NXP Semiconductors - PMDPB65UP
PMDPB65UP by NXP Semiconductors

Image shown is a representation only.

Manufacturer NXP Semiconductors
Manufacturer's Part Number PMDPB65UP
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain-Source On Resistance: .09 ohm; JESD-30 Code: S-PDSO-N6;
Datasheet PMDPB65UP Datasheet
In Stock906
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .0035 A
Polarity or Channel Type: P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .09 ohm
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
906 - -

Popular Products

Category Top Products

BSS84 by Diodes Incorporated

BSS84

Diodes Incorporated

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Moisture Sensitivity Level (MSL): 1; Package Shape: RECTANGULAR;
2N7002KT1G by Onsemi

2N7002KT1G

Onsemi

2N7002KT1G by Onsemi is a N-CHANNEL FET with 60V DS breakdown voltage and 0.32A max drain current. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 0.3W. This small outline transistor features a built-in diode and GULL WING terminals, suitable for surface mount configurations.
2N7002K by Changzhou Galaxy Century Microelectronics

2N7002K

Changzhou Galaxy Century Microelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .83 W; JESD-30 Code: R-PDSO-G3; Minimum DS Breakdown Voltage: 60 V;
ZVN3320FTA by Zetex Plc

ZVN3320FTA

Zetex Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Package Style (Meter): SMALL OUTLINE; Maximum Operating Temperature: 150 Cel;
FDMA1032CZ by Fairchild Semiconductor

FDMA1032CZ

Fairchild Semiconductor

N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Additional Features: ESD PROTECTION; Maximum Drain Current (Abs) (ID): 3.7 A;
IRLML6302TRPBF by International Rectifier

IRLML6302TRPBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; No. of Terminals: 3; Terminal Form: GULL WING;
LBSS84LT1G by Leshan Radio

LBSS84LT1G

Leshan Radio

LBSS84LT1G by Leshan Radio is a P-CHANNEL small signal FET with a min DS breakdown voltage of 50V. It is used for switching applications and operates in enhancement mode. This surface mount transistor has a max drain current of 0.13A and a max power dissipation of 0.225W.
FDG6332C-F085 by Onsemi

FDG6332C-F085

Onsemi

FDG6332C-F085 by Onsemi is a Small Signal FET with N/P-Channel, 2 elements w/ diode. It operates in enhancement mode for switching applications. Features include 20V DS breakdown voltage, 0.7A max drain current, and 0.3ohm on-resistance. Suitable for surface mount with Gull Wing terminals in a small outline package.
NDS355AN by Fairchild Semiconductor

NDS355AN

Fairchild Semiconductor

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; JESD-30 Code: R-PDSO-G3; Terminal Position: DUAL;
SI2347DS-T1-GE3 by Vishay Intertechnology

SI2347DS-T1-GE3

Vishay Intertechnology

SI2347DS-T1-GE3 by Vishay Intertechnology is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 5A, 0.042 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temperature of 260°C, it is suitable for various electronic devices requiring high power dissipation.
ZXMP10A13FTA by Diodes Incorporated

ZXMP10A13FTA

Diodes Incorporated

ZXMP10A13FTA by Diodes Inc. is a P-CHANNEL FET with 100V DS breakdown voltage, 0.7A max drain current, and 1 ohm max on resistance. Ideal for switching applications, it operates in enhancement mode with a max temp of 150°C.
FDG6301N by Onsemi

FDG6301N

Onsemi

The Onsemi FDG6301N is a N-CHANNEL FET with 2 elements and built-in diode, ideal for SWITCHING applications. It features a 25V DS Breakdown Voltage, 0.22A Drain Current, and 4 ohm On Resistance. With GULL WING terminals and SMALL OUTLINE package style, it operates in ENHANCEMENT MODE at up to 150°C.
BF862 by NXP Semiconductors

BF862

NXP Semiconductors

NXP Semiconductors' BF862 is a N-CHANNEL FET with 20V DS Breakdown Voltage, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it has a max power dissipation of 0.225W and max drain current of 0.04A. The transistor's package is RECTANGULAR with GULL WING terminals, suitable for surface mount assembly at temperatures up to 150°C.
2N7000 by Vishay Semiconductors

2N7000

Vishay Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Terminal Position: BOTTOM; Maximum Drain-Source On Resistance: 5 ohm; Terminal Form: WIRE;
BSS123NH6327 by Infineon Technologies

BSS123NH6327

Infineon Technologies

BSS123NH6327 by Infineon Technologies is a N-CHANNEL FET with 100V DS breakdown voltage. It features 0.19A max drain current, 6 ohm max drain-source resistance, and operates in enhancement mode. Ideal for small outline applications requiring high power dissipation up to 0.5W at 150°C.
AO3401AL by Alpha & Omega Semiconductor

AO3401AL

Alpha & Omega Semiconductor

AO3401AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 4.3A and RDS(on) of 0.044 ohm, making it suitable for various small outline surface mount designs.
ZVP2106ASTOA by Zetex Plc

ZVP2106ASTOA

Zetex Plc

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Operating Mode: ENHANCEMENT MODE; Transistor Application: SWITCHING; Maximum Drain Current (ID): .28 A;
DMP6023LFG-7 by Diodes Incorporated

DMP6023LFG-7

Diodes Incorporated

DMP6023LFG-7 by Diodes Inc. is a P-CHANNEL FET with 60V DS breakdown voltage, 7.7A max drain current, and 0.025 ohm RDS(on). Ideal for switching applications in automotive electronics due to AEC-Q101 compliance and ENHANCEMENT MODE operation.
SI2302CDS-T1-GE3 by Vishay Intertechnology

SI2302CDS-T1-GE3

Vishay Intertechnology

SI2302CDS-T1-GE3 by Vishay Intertechnology is a N-channel FET for switching applications. It features 20V DS breakdown voltage, 2.6A max drain current, and 0.057ohm max on-resistance. With a small outline package and operating up to 150°C, it's ideal for compact electronic devices requiring efficient power management.
FDC2512 by Onsemi

FDC2512

Onsemi

The Onsemi FDC2512 is a N-CHANNEL FET with 150V DS breakdown voltage, ideal for switching applications. It features a max drain current of 1.4A and 0.425 ohm drain-source resistance. With a small outline package style and matte tin terminal finish, it operates in enhancement mode up to 150°C, making it suitable for various electronic devices requiring high power dissipation.