NXP Semiconductors - PMT200EN,135

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PMT200EN,135 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMT200EN,135
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 8.3 W; Maximum Drain Current (Abs) (ID): 1.8 A; Maximum Operating Temperature: 150 Cel;
Datasheet PMT200EN,135 Datasheet
In Stock3,624
NAME DESCRIPTION
Other Names: 568-10826-1
2156-PMT200EN135-NXTR-ND
2156-PMT200EN135
568-10826-2
934066917135
PMT200EN,135-ND
568-10826-6
2156-PMT200EN,135-ND
NEXNXPPMT200EN,135
Maximum Power Dissipation (Abs): 8.3 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 1.8 A
Maximum Drain Current (Abs) (ID): 1.8 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

Qty. Unit Price Ext. Price
3,624 $0.076 $275.424

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