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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PMT760EN,115 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 6.2 W; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; |
| Datasheet | PMT760EN,115 Datasheet |
| In Stock | 3,244 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
934066918115 2156-PMT760EN115-NXTR NEXNXPPMT760EN,115 |
| Maximum Power Dissipation (Abs): | 6.2 W |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | .9 A |
| Maximum Drain Current (Abs) (ID): | .9 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









