NXP Semiconductors - PMV45EN2R

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PMV45EN2R by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PMV45EN2R
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.115 W; Maximum Drain Current (ID): 4.1 A; Terminal Form: GULL WING;
Datasheet PMV45EN2R Datasheet
In Stock126,630
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 4.1 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1.115 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .042 ohm
JEDEC-95 Code: TO-236AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 30 V
Additional Features: LOGIC LEVEL COMPATIBLE
Reference Standard: IEC-60134
Maximum Drain Current (Abs) (ID): 5.1 A
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