NXP Semiconductors - PSMN3R8-100BS

PSMN3R8-100BS by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PSMN3R8-100BS
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0039 ohm; Maximum Pulsed Drain Current (IDM): 680 A; No. of Terminals: 2;
Datasheet PSMN3R8-100BS Datasheet
In Stock665
NAME DESCRIPTION
Avalanche Energy Rating (EAS): 537 mJ
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 120 A
Maximum Pulsed Drain Current (IDM): 680 A
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: PURE TIN
No. of Terminals: 2
Minimum DS Breakdown Voltage: 100 V
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0039 ohm
Moisture Sensitivity Level (MSL): 1
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