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| Manufacturer | NXP Semiconductors |
|---|---|
| Manufacturer's Part Number | PSMN9R0-25YLC,115 |
| Description | N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 34 W; JESD-609 Code: e3; Operating Mode: ENHANCEMENT MODE; |
| Datasheet | PSMN9R0-25YLC,115 Datasheet |
| In Stock | 3,395 |
| NAME | DESCRIPTION |
|---|---|
| Other Names: |
934066019115 PSMN9R025YLC115 2156-PSMN9R0-25YLC115-NXTR NEXNXPPSMN9R0-25YLC,115 568-7592-6 568-7592-2 568-7592-1 |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SINGLE |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Maximum Drain Current (ID): | 46 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |
| Terminal Finish: | TIN |
| JESD-609 Code: | e3 |
| Maximum Power Dissipation (Abs): | 34 W |
| No. of Elements: | 1 |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Maximum Drain Current (Abs) (ID): | 46 A |
| Peak Reflow Temperature (C): | 260 |
| Moisture Sensitivity Level (MSL): | 1 |









