NXP Semiconductors - PUMH18/T1

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PUMH18/T1 by NXP Semiconductors

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Manufacturer NXP Semiconductors
Manufacturer's Part Number PUMH18/T1
Description NPN; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Additional Features: BUILT IN BIAS RESISTOR RATIO 2.1; Package Shape: RECTANGULAR;
Datasheet PUMH18/T1 Datasheet
In Stock2,802
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Polarity or Channel Type: NPN
Surface Mount: YES
Minimum DC Current Gain (hFE): 50
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 6
Qualification: Not Qualified
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Additional Features: BUILT IN BIAS RESISTOR RATIO 2.1
Maximum Operating Temperature: 150 Cel
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