2N5130 by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	2N5130
Description	NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 450 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .05 A;
Datasheet	2N5130 Datasheet
In Stock	405

NAME	DESCRIPTION
Nominal Transition Frequency (fT):	450 MHz
Package Body Material:	PLASTIC/EPOXY
Maximum Collector Current (IC):	.05 A
Configuration:	SINGLE
Transistor Element Material:	SILICON
Transistor Application:	AMPLIFIER
Sub-Category:	Other Transistors
Surface Mount:	NO
Terminal Finish:	TIN LEAD
No. of Terminals:	4
Maximum Power Dissipation (Abs):	.2 W
Terminal Position:	BOTTOM
Package Style (Meter):	CYLINDRICAL
JESD-30 Code:	O-PBCY-W4
No. of Elements:	1
Package Shape:	ROUND
Terminal Form:	WIRE
Maximum Operating Temperature:	150 Cel
Polarity or Channel Type:	NPN
Minimum DC Current Gain (hFE):	15
JESD-609 Code:	e0
Qualification:	Not Qualified
Maximum Collector-Emitter Voltage:	12 V
Maximum Collector-Base Capacitance:	1.7 pF
Maximum VCEsat:	.6 V

Pricing (USD)

Qty.	Unit Price	Ext. Price
405	-	-

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