Onsemi - 2SB826

  1. Home
  2. Onsemi - 2SB826
2SB826 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SB826
Description PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Collector Current (IC): 12 A; No. of Terminals: 3;
Datasheet 2SB826 Datasheet
In Stock2,451
NAME DESCRIPTION
Nominal Transition Frequency (fT): 10 MHz
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 12 A
Configuration: SINGLE
Transistor Element Material: SILICON
Transistor Application: SWITCHING
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: PNP
Surface Mount: NO
Minimum DC Current Gain (hFE): 30
No. of Terminals: 3
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,451 - -

Popular Products

Category Top Products

TIP117 by STMicroelectronics

TIP117

STMicroelectronics

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Terminal Form: THROUGH-HOLE;
MJE340 by General Transistor

MJE340

General Transistor

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A; Maximum Operating Temperature: 150 Cel;
BD243C by Crimson Semiconductor

BD243C

Crimson Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Collector Current (IC): 6 A; JESD-30 Code: R-PSFM-T3;
TIP3055 by Onsemi

TIP3055

Onsemi

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2.5 MHz; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 15 A;
TIP42A by New Jersey Semiconductor Products

TIP42A

New Jersey Semiconductor Products

PNP; Configuration: SINGLE; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 6 A; Maximum Collector-Emitter Voltage: 60 V; Transistor Element Material: SILICON;
TIP111 by Onsemi

TIP111

Onsemi

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A; Case Connection: COLLECTOR;
TIP47 by Power Innovations

TIP47

Power Innovations

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 1 A; No. of Elements: 1; Terminal Form: THROUGH-HOLE;
TIP115 by Texas Instruments

TIP115

Texas Instruments

TIP115 by Texas Instruments is a PNP Darlington transistor with max. power dissipation of 50W, hFE of 500, and max. collector current of 4A. Ideal for switching applications due to its high gain and low collector-emitter voltage drop. Package style is flange mount with through-hole terminals for easy installation.
TIP117 by Onsemi

TIP117

Onsemi

PNP; Configuration: DARLINGTON WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: NO; Nominal Transition Frequency (fT): 25 MHz; Maximum Power Dissipation (Abs): 50 W; Maximum Collector Current (IC): 2 A;
MJE3055T by STMicroelectronics

MJE3055T

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 2 MHz; Maximum Power Dissipation (Abs): 75 W; Maximum Collector Current (IC): 10 A;
TIP111G by Onsemi

TIP111G

Onsemi

TIP111G by Onsemi is a NPN BJT with Darlington configuration, ideal for amplifier applications. It features 50W power dissipation, 80V max collector-emitter voltage, and 2A max collector current. The package is rectangular with through-hole terminals and can operate up to 150°C.
TIP32C by Texas Instruments

TIP32C

Texas Instruments

TIP32C by Texas Instruments is a PNP BJT transistor with 3 terminals, capable of handling up to 40W power dissipation. It operates at a max temperature of 150°C and has a collector-emitter voltage of 100V. Ideal for switching applications due to its high collector current of 3A and transition frequency of 3MHz.
TIP120 by NXP Semiconductors

TIP120

NXP Semiconductors

NPN; Configuration: DARLINGTON; Surface Mount: NO; Maximum Collector Current (IC): 5 A; No. of Elements: 1; Package Shape: RECTANGULAR;
2N2905A by Vpt Components

2N2905A

Vpt Components

PNP; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 3 W; Maximum Collector Current (IC): .6 A; Maximum Turn Off Time (toff): 300 ns;
TIP120 by Texas Instruments

TIP120

Texas Instruments

TIP120 by Texas Instruments is a NPN Darlington transistor with max VCEsat of 4V and hFE of 1000. Ideal for switching applications, it has a max IC of 5A and can handle up to 65W power dissipation. With a max operating temp of 150°C, it's commonly used in power control circuits.
BD140G by Onsemi

BD140G

Onsemi

The Onsemi BD140G is a PNP BJT transistor with 80V VCE, 1.5A IC, and 12.5W power dissipation. Ideal for amplifier applications, it has a min hFE of 25 and operates up to 150°C. The package is through-hole with matte tin finish in a rectangular shape.
D44H8 by New Jersey Semiconductor Products

D44H8

New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 10 A; JESD-609 Code: e0; Transistor Element Material: SILICON;
TIP35C by Nte Electronics

TIP35C

Nte Electronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3 MHz; Maximum Collector Current (IC): 25 A; Transistor Application: SWITCHING;
BUV48A by SPC TECHNOLOGY/ MULTICOMP

BUV48A

SPC TECHNOLOGY/ MULTICOMP

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 15 A; Package Style (Meter): FLANGE MOUNT; Package Shape: RECTANGULAR;
MJE340 by Asi Semiconductor

MJE340

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 10 MHz; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): .5 A;