Onsemi - 2SK3707

2SK3707 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number 2SK3707
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Drain Current (Abs) (ID): 20 A; No. of Terminals: 3;
Datasheet 2SK3707 Datasheet
In Stock325
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 80 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
No. of Terminals: 3
Maximum Power Dissipation (Abs): 25 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: .08 ohm
Avalanche Energy Rating (EAS): 125 mJ
JEDEC-95 Code: TO-220AB
Polarity or Channel Type: N-CHANNEL
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): 20 A
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
325 - -

Popular Products

Category Top Products