Onsemi - 3LN01SS-TL-H

3LN01SS-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number 3LN01SS-TL-H
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; No. of Terminals: 3; Transistor Application: SWITCHING;
Datasheet 3LN01SS-TL-H Datasheet
In Stock2,035
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .15 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin/Bismuth (Sn/Bi)
No. of Terminals: 3
Maximum Power Dissipation (Abs): .15 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 3.7 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 30 V
Maximum Drain Current (Abs) (ID): .15 A
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Pricing (USD)

Qty. Unit Price Ext. Price
2,035 $0.063 $128.205

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