Onsemi - AFGB40T65SQDN

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AFGB40T65SQDN by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number AFGB40T65SQDN
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 238 W; Maximum Collector Current (IC): 80 A; Minimum Operating Temperature: -55 Cel;
Datasheet AFGB40T65SQDN Datasheet
In Stock1,190
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 80 A
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.4 V
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 2
Maximum Power Dissipation (Abs): 238 W
Terminal Position: SINGLE
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PSSO-G2
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Maximum Operating Temperature: 175 Cel
Case Connection: COLLECTOR
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: TO-263AB
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: AEC-Q101
Peak Reflow Temperature (C): 260
Maximum VCEsat: 2.1 V
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