Onsemi - AFGY120T65SPD-B4

AFGY120T65SPD-B4 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number AFGY120T65SPD-B4
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 882 W; Maximum Collector Current (IC): 240 A; Maximum Gate-Emitter Threshold Voltage: 6.2 V;
Datasheet AFGY120T65SPD-B4 Datasheet
In Stock1,582
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): 240 A
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Transistor Application: POWER CONTROL
Maximum Gate-Emitter Threshold Voltage: 6.2 V
Surface Mount: NO
Nominal Turn Off Time (toff): 247 ns
No. of Terminals: 3
Maximum Power Dissipation (Abs): 882 W
Terminal Position: SINGLE
Nominal Turn On Time (ton): 183 ns
Package Style (Meter): FLANGE MOUNT
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Maximum Operating Temperature: 175 Cel
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Maximum Collector-Emitter Voltage: 650 V
Additional Features: RC-IGBT
Maximum Gate-Emitter Voltage: 20 V
Reference Standard: AEC-Q101
Maximum VCEsat: 1.85 V
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Pricing (USD)

Qty. Unit Price Ext. Price
1,582 $6.940 $10,979.080

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