Onsemi - ARRAYC-30035-16P-PCB

  1. Home
  2. Onsemi - ARRAYC-30035-16P-PCB
ARRAYC-30035-16P-PCB by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number ARRAYC-30035-16P-PCB
Description AVALANCHE PHOTODIODE;
Datasheet ARRAYC-30035-16P-PCB Datasheet
In Stock14
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
14 - -

Popular Products

Category Top Products

1N2175 by Texas Instruments

1N2175

Texas Instruments

1N2175 by Texas Instruments is a single photodiode with max operating temp of 125°C and min of -60°C. It has a nominal light current of 0.1 mA, max dark current of 500 nA, and max response time of 0.000002 s. With a max reverse voltage of 50 V, it's ideal for applications requiring precise light detection in various environments.
VEMD2500X01 by Vishay Intertechnology

VEMD2500X01

Vishay Intertechnology

Vishay Intertechnology's VEMD2500X01 is a single PIN photodiode with peak wavelength of 900nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 32V and max reverse voltage of 60V. Ideal for infrared applications, it has nominal light current of 0.012mA and max dark current of 10nA.
124NLVTC by Broadcom

124NLVTC

Broadcom

Photo Diodes;
NDL5131P1C by Renesas Electronics

NDL5131P1C

Renesas Electronics

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 45 V; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Maximum Dark Current: 200 nA;
HSDL-5420#011 by Lite-on Technology

HSDL-5420#011

Lite-on Technology

PIN PHOTODIODE; Minimum Reverse Breakdown Voltage: 40 V; Peak Wavelength (nm): 875; Configuration: SINGLE; Maximum Operating Temperature: 85 Cel; Shape: ROUND;
HSDL-5400-OPTION-1S1 by Broadcom

HSDL-5400-OPTION-1S1

Broadcom

PIN PHOTODIODE; Terminal Finish: Tin (Sn); Configuration: SINGLE; Nominal Light Current: .0016 mA; JESD-609 Code: e3; Shape: ROUND;
SRD00534H by Infineon Technologies

SRD00534H

Infineon Technologies

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: Germanium; Maximum Response Time: .0000000000003 s; Maximum Dark Current: 20 nA; Maximum Operating Temperature: 85 Cel;
MICROFJ-30020-TSV-TR1 by Onsemi

MICROFJ-30020-TSV-TR1

Onsemi

MICROFJ-30020-TSV-TR1 by Onsemi is a 3.07mm square avalanche photodiode with peak wavelength of 420nm. It operates b/w -40°C to 85°C, with min reverse breakdown voltage of 24.2V and max dark current of 720nA. Ideal for optoelectronic applications requiring high sensitivity and precision in temperature-controlled environments.
KOM2100AF by Infineon Technologies

KOM2100AF

Infineon Technologies

Photo Diodes; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 80 Cel; JESD-609 Code: e0; Minimum Operating Temperature: -40 Cel;
SFH214FA by Infineon Technologies

SFH214FA

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Semiconductor Material: Silicon; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 100 Cel;
MICROFC-SMTPA-60035-GEVB-TR1 by Onsemi

MICROFC-SMTPA-60035-GEVB-TR1

Onsemi

AVALANCHE PHOTODIODE;
NR8500FR-BB by Renesas Electronics

NR8500FR-BB

Renesas Electronics

Photo Diodes;
SFH204FA by Infineon Technologies

SFH204FA

Infineon Technologies

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Response Time: .00000002 s; Minimum Operating Temperature: -55 Cel; Maximum Reverse Voltage: 20 V;
TPS704 by Toshiba

TPS704

Toshiba

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Response Time: .0000001 s; Configuration: SINGLE; Maximum Operating Temperature: 60 Cel; Additional Features: HIGH SENSITIVITY;
PIN6DI by Udt Sensors

PIN6DI

Udt Sensors

PIN PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Reverse Voltage: 50 V; Minimum Operating Temperature: -55 Cel; Maximum Response Time: .00000002 s; Maximum Dark Current: 20 nA;
QSD2030F by Onsemi

QSD2030F

Onsemi

The Onsemi QSD2030F is a 5mm PIN photodiode with peak wavelength of 880nm. It operates b/w -40 to 100°C, with reverse breakdown voltage of 50V. Ideal for IR applications, it has low dark current (10nA) and nominal light current (0.025mA).
NR8500FP-BC by Renesas Electronics

NR8500FP-BC

Renesas Electronics

Photo Diodes;
BPW34FA by Siemens

BPW34FA

Siemens

PIN PHOTODIODE; Maximum Dark Current: 30 nA; Peak Wavelength (nm): 870; Nominal Light Current: .04 mA; No. of Functions: 1; Shape: RECTANGULAR;
SRD00512Z by Infineon Technologies

SRD00512Z

Infineon Technologies

AVALANCHE PHOTODIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Operating Temperature: 85 Cel; Semiconductor Material: Germanium; Maximum Response Time: .0000000000003 s;
SFH206K by Infineon Technologies

SFH206K

Infineon Technologies

SFH206K by Infineon Technologies is a PIN photodiode with a max operating temperature of 80°C and a min operating temperature of -40°C. It has a max dark current of 30nA and a max response time of 0.00000035s. This photodiode is commonly used in optoelectronic applications requiring high-speed detection and precise light measurement.