Onsemi - ATP218-TL-H

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ATP218-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ATP218-TL-H
Description N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 60 W; Maximum Drain Current (Abs) (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
Datasheet ATP218-TL-H Datasheet
In Stock1,441
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 60 W
Configuration: SINGLE
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
No. of Elements: 1
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 100 A
Maximum Drain Current (Abs) (ID): 100 A
Sub-Category: FET General Purpose Powers
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
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Pricing (USD)

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