Onsemi - BS108G

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BS108G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number BS108G
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): .35 W; JESD-30 Code: O-PBCY-T3; Package Style (Meter): CYLINDRICAL;
Datasheet BS108G Datasheet
In Stock2,055
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .25 A
Sub-Category: FET General Purpose Power
Surface Mount: NO
Terminal Finish: TIN SILVER COPPER
No. of Terminals: 3
Maximum Power Dissipation (Abs): .35 W
Terminal Position: BOTTOM
Package Style (Meter): CYLINDRICAL
JESD-30 Code: O-PBCY-T3
No. of Elements: 1
Package Shape: ROUND
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 8 ohm
Maximum Feedback Capacitance (Crss): 10 pF
JEDEC-95 Code: TO-92
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e1
Minimum DS Breakdown Voltage: 200 V
Qualification: Not Qualified
Additional Features: LOGIC LEVEL COMPATIBLE
Maximum Drain Current (Abs) (ID): .25 A
Peak Reflow Temperature (C): 260
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