CPH3355-TL-H by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	CPH3355-TL-H
Description	P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Form: GULL WING;
Datasheet	CPH3355-TL-H Datasheet
In Stock	269

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	30
Configuration:	SINGLE WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID):	2.5 A
Surface Mount:	YES
Terminal Finish:	TIN BISMUTH
No. of Terminals:	3
Maximum Power Dissipation (Abs):	1 W
Terminal Position:	DUAL
Package Style (Meter):	SMALL OUTLINE
JESD-30 Code:	R-PDSO-G3
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	GULL WING
Operating Mode:	ENHANCEMENT MODE
Maximum Operating Temperature:	150 Cel
Maximum Drain-Source On Resistance:	.156 ohm
Moisture Sensitivity Level (MSL):	1
JEDEC-95 Code:	TO-236
Polarity or Channel Type:	P-CHANNEL
JESD-609 Code:	e6
Minimum DS Breakdown Voltage:	30 V
Peak Reflow Temperature (C):	260

Pricing (USD)

Qty.	Unit Price	Ext. Price
269	$0.095	$25.555

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