Onsemi - CPH3362-TL-W

CPH3362-TL-W by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number CPH3362-TL-W
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; JESD-609 Code: e6; Maximum Feedback Capacitance (Crss): 7.3 pF;
Datasheet CPH3362-TL-W Datasheet
In Stock14,957
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Drain Current (ID): .7 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN BISMUTH
No. of Terminals: 3
Maximum Power Dissipation (Abs): 1 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.7 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 7.3 pF
JEDEC-95 Code: TO-236
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e6
Minimum DS Breakdown Voltage: 100 V
Maximum Drain Current (Abs) (ID): .7 A
Peak Reflow Temperature (C): 260
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