Onsemi - CPH5518-TL-E

  1. Home
  2. Onsemi - CPH5518-TL-E
CPH5518-TL-E by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number CPH5518-TL-E
Description NPN AND PNP; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Maximum Collector Current (IC): 1 A; Minimum DC Current Gain (hFE): 200; JESD-609 Code: e6;
Datasheet CPH5518-TL-E Datasheet
In Stock1,500
NAME DESCRIPTION
Other Names: CPH5518-TL-EOSTR
ONSONSCPH5518-TL-E
2156-CPH5518-TL-E-OS
CPH5518-TL-EOSDKR
CPH5518-TL-EOSCT
CPH5518-TL-E-ND
Maximum Collector Current (IC): 1 A
Maximum Time At Peak Reflow Temperature (s): 30
Sub-Category: BIP General Purpose Small Signals
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 200
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
Maximum Power Dissipation (Abs): 1.2 W
Maximum Operating Temperature: 150 Cel
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,500 $0.209 $313.500

Popular Products

Category Top Products

JANTX2N2222AUB by M/a-com Technology Solutions

JANTX2N2222AUB

M/a-com Technology Solutions

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; Reference Standard: MIL-19500;
BC846B by Philips Components

BC846B

Philips Components

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .2 A; Maximum Collector-Emitter Voltage: 65 V;
BC547C-G by Weitronic Enterprise

BC547C-G

Weitronic Enterprise

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
MMBT3906-TP by Micro Commercial Components

MMBT3906-TP

Micro Commercial Components

MMBT3906-TP by Micro Commercial Components is a PNP BJT transistor with hFE of 100. It has a max power dissipation of 0.3W and operates up to 150°C. Ideal for amplifier applications, this SMD transistor offers a transition frequency of 250MHz in a small outline package.
2N2219A by Electronic Transistors

2N2219A

Electronic Transistors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .8 A;
BC858B,215 by Nexperia

BC858B,215

Nexperia

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; JESD-609 Code: e3;
JANTX2N2222AUB by Crystalonics

JANTX2N2222AUB

Crystalonics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .8 A; Transistor Application: SWITCHING; No. of Elements: 1;
2N2219A by NXP Semiconductors

2N2219A

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; Maximum VCEsat: 1 V;
BC847C-7-F by Diodes Incorporated

BC847C-7-F

Diodes Incorporated

BC847C-7-F by Diodes Inc. is a NPN small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 45V and a min DC current gain of 420. It is commonly used for switching applications due to its surface mount capability and max power dissipation of 0.3W.
BC547C by Kec

BC547C

Kec

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 150 MHz; Maximum Power Dissipation (Abs): .625 W; Maximum Collector Current (IC): .1 A;
PN2222ABU by Onsemi

PN2222ABU

Onsemi

PN2222ABU by Onsemi is a NPN bipolar junction transistor (BJT) with a max collector-emitter voltage of 40V and a max collector current of 1A. It is commonly used for switching applications due to its high DC current gain (hFE) of 40 and fast turn on/off times (ton: 35ns, toff: 285ns).
BC846A,215 by Nexperia

BC846A,215

Nexperia

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): .1 A; Qualification: Not Qualified;
BC847BW,115 by NXP Semiconductors

BC847BW,115

NXP Semiconductors

NXP Semiconductors' BC847BW,115 is a NPN BJT transistor with VCEsat of 0.6V and hFE of 200. Ideal for switching applications, it has a max IC of 0.1A and operates up to 150°C. With a compact SOT package, it offers fast transition frequency at 100MHz.
MMBT2222A by Zowie Technology

MMBT2222A

Zowie Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .6 A;
2N2905A by Solid State Devices

2N2905A

Solid State Devices

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 200 MHz; Maximum Power Dissipation (Abs): .6 W; Maximum Collector Current (IC): .6 A;
MMBT2222A by Silicon Standard

MMBT2222A

Silicon Standard

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .6 A;
2N3906 by General Semiconductor

2N3906

General Semiconductor

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .2 A;
JANTX2N2222AUA by Microsemi

JANTX2N2222AUA

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 250 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
BC846B by Central Semiconductor

BC846B

Central Semiconductor

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .1 A;
BC547CG by Onsemi

BC547CG

Onsemi

BC547CG by Onsemi is a NPN BJT with 3 terminals. It has a max power dissipation of 0.625W, hFE of 420, and fT of 300MHz. Ideal for amplifier applications due to its max collector-emitter voltage of 45V and max collector current of 0.1A.