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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | CPH6612 |
| Description | N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .8 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 2 A; Maximum Drain Current (Abs) (ID): 2 A; |
| Datasheet | CPH6612 Datasheet |
| In Stock | 1,529 |
| NAME | DESCRIPTION |
|---|---|
| Maximum Power Dissipation (Abs): | .8 W |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 150 Cel |
| Maximum Drain Current (ID): | 2 A |
| Maximum Drain Current (Abs) (ID): | 2 A |
| Sub-Category: | FET General Purpose Power |
| Polarity or Channel Type: | N-CHANNEL |
| Surface Mount: | YES |









