Onsemi - DL-3147-041

  1. Home
  2. Onsemi - DL-3147-041
DL-3147-041 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number DL-3147-041
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 655; Maximum Operating Temperature: 60 Cel; Semiconductor Material: AlGaInP;
Datasheet DL-3147-041 Datasheet
In Stock1,852
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Peak Wavelength (nm): 655
Maximum Operating Temperature: 60 Cel
Semiconductor Material: AlGaInP
Sub-Category: Laser Diodes
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,852 - -

Popular Products

Category Top Products

NX5310EK-AZ by Renesas Electronics

NX5310EK-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 85 Cel; Maximum Forward Voltage: 1.5 V; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -40 Cel;
NX8563LAS303-CD-A by Renesas Electronics

NX8563LAS303-CD-A

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -20 Cel; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1530; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
TOLD171 by Toshiba

TOLD171

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Operating Temperature: 50 Cel; Peak Wavelength (nm): 830; Maximum Forward Current: .095 A;
NDL5850C by Renesas Electronics

NDL5850C

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Response Time: .0000000001 s; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAs; Maximum Forward Voltage: 1.3 V;
CQF23/D11 by NXP Semiconductors

CQF23/D11

NXP Semiconductors

CQF23/D11 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 790 nm and a max forward current of 0.07 A. It operates efficiently b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks in communication systems.
DL-LS1032 by Onsemi

DL-LS1032

Onsemi

DL-LS1032 by Onsemi is a Laser Diode with 0.08A max forward current, peak wavelength of 635nm, and 2.5V max forward voltage. Ideal for applications requiring laser diodes in temperatures ranging from -10 °C to 50°C, featuring through hole mounting.
TOLD124R by Toshiba

TOLD124R

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 780; Maximum Forward Current: .08 A; Maximum Operating Temperature: 50 Cel; Minimum Operating Temperature: -10 Cel;
DL-3038-033 by Onsemi

DL-3038-033

Onsemi

DL-3038-033 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in various industries.
NX8570SC634-BA-AZ by Renesas Electronics

NX8570SC634-BA-AZ

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1563; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP;
NX8570SC6070-BA-AZ by Renesas Electronics

NX8570SC6070-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1607; Maximum Forward Current: .3 A; Minimum Operating Temperature: -5 Cel; Semiconductor Material: InGaAsP; Maximum Operating Temperature: 70 Cel;
NX8563LB606-CA by Renesas Electronics

NX8563LB606-CA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 65 Cel; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1560;
NX8565LE6031-CC by Renesas Electronics

NX8565LE6031-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Semiconductor Material: GaAs; Peak Wavelength (nm): 1600; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V;
NX8562LF654-BA-AZ by Renesas Electronics

NX8562LF654-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: GaAs; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 1.5 V;
SDL-LS30 by Onsemi

SDL-LS30

Onsemi

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: -10 Cel; Peak Wavelength (nm): 685;
NX8570SC878-BA-AZ by Renesas Electronics

NX8570SC878-BA-AZ

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2.5 V; Minimum Operating Temperature: -5 Cel; Maximum Forward Current: .3 A; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;
TOLD323CBA by Toshiba

TOLD323CBA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
STL51705A by Infineon Technologies

STL51705A

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Current: .12 A; Minimum Operating Temperature: -40 Cel; Spectral Bandwidth: 5 m; Maximum Forward Voltage: 1.5 V;
NX8570SC358-BA-AZ by Renesas Electronics

NX8570SC358-BA-AZ

Renesas Electronics

LASER DIODE; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1535; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Maximum Forward Current: .3 A;
NX8510UD53-A by Renesas Electronics

NX8510UD53-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.6 V; Maximum Response Time: .0000000001 s; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .15 A;
TOLD322BAC by Toshiba

TOLD322BAC

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 65 Cel; Maximum Response Time: .000000001 s; Minimum Operating Temperature: 0 Cel; Maximum Forward Voltage: 1.5 V;