Renesas Electronics - NX8508CE51-CC

  1. Home
  2. Renesas Electronics - NX8508CE51-CC
NX8508CE51-CC by Renesas Electronics

Image shown is a representation only.

Manufacturer Renesas Electronics
Manufacturer's Part Number NX8508CE51-CC
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 70 Cel; Minimum Operating Temperature: 0 Cel; Semiconductor Material: InGaAsP; Maximum Forward Current: .15 A;
Datasheet NX8508CE51-CC Datasheet
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .15 A
Peak Wavelength (nm): 1510
Maximum Response Time: .0000000001 s
Maximum Operating Temperature: 70 Cel
Semiconductor Material: InGaAsP
Sub-Category: Laser Diodes
Maximum Forward Voltage: 1.6 V
Minimum Operating Temperature: 0 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Popular Products

Category Top Products

DL3038-021 by Onsemi

DL3038-021

Onsemi

DL3038-021 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
TOLD2000SDA by Toshiba

TOLD2000SDA

Toshiba

LASER DIODE; Size: 1.5 mm; Peak Wavelength (nm): 790; Maximum Threshold Current: 40 mA; Nominal Output Power: 7 W; No. of Functions: 1;
DL-7140-201P by Onsemi

DL-7140-201P

Onsemi

DL-7140-201P by Onsemi is a LASER DIODE with Peak Wavelength of 783nm, Max Forward Current of 0.14A, and Operating Temperature range from -10 °C to 60°C. It is ideal for applications requiring precise laser emission in through-hole mounting configurations.
DL-7140-201S by Onsemi

DL-7140-201S

Onsemi

DL-7140-201S by Onsemi is a Laser Diode with peak wavelength of 785nm, max forward current of 0.14A, and max operating temp of 60 °C. Ideal for applications requiring precise laser emission in medical or industrial settings.
NX6508GK61-A by Renesas Electronics

NX6508GK61-A

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Semiconductor Material: InGaAsP; Maximum Forward Voltage: 1.6 V; Maximum Operating Temperature: 85 Cel; Maximum Response Time: .0000000001 s;
SDL6032-001 by Onsemi

SDL6032-001

Onsemi

SDL6032-001 by Onsemi is an 830nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
DL-3149-055 by Onsemi

DL-3149-055

Onsemi

DL-3149-055 by Onsemi is a 680nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser emission in optoelectronics and telecommunications.
CQF25B/D14 by NXP Semiconductors

CQF25B/D14

NXP Semiconductors

CQF25B/D14 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 850 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With a rapid response time of just 0.5 ns, it's perfect for communication systems.
TOLD321ABA by Toshiba

TOLD321ABA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 2 V; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000001 s; Peak Wavelength (nm): 1310;
NX8565LE6031-BC by Renesas Electronics

NX8565LE6031-BC

Renesas Electronics

Laser Diodes;
TOLD323ABB by Toshiba

TOLD323ABB

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -10 Cel; Maximum Forward Voltage: 2 V; Maximum Response Time: .000000001 s; Maximum Operating Temperature: 70 Cel;
NX8563LA565-CD-A by Renesas Electronics

NX8563LA565-CD-A

Renesas Electronics

LASER DIODE; Maximum Response Time: .00000000012 s; Peak Wavelength (nm): 1556; Maximum Forward Current: .3 A; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 85 Cel;
NX8562LB295-CA by Renesas Electronics

NX8562LB295-CA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel;
NX8567SAS401-BC by Renesas Electronics

NX8567SAS401-BC

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Response Time: .000000000125 s; Maximum Forward Current: .15 A; Maximum Forward Voltage: 2 V; Peak Wavelength (nm): 1540;
STM81005G by Infineon Technologies

STM81005G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 5 m; Peak Wavelength (nm): 1330; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 85 Cel;
STH61005G by Infineon Technologies

STH61005G

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -40 Cel; Maximum Forward Voltage: 1.5 V; Maximum Operating Temperature: 85 Cel; Maximum Forward Current: .12 A;
TOLD332S by Toshiba

TOLD332S

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 1310; Maximum Operating Temperature: 60 Cel; Minimum Operating Temperature: 10 Cel; Maximum Response Time: .0000000003 s;
SDL8032-101 by Onsemi

SDL8032-101

Onsemi

SDL8032-101 by Onsemi is an 850nm LASER DIODE with GaAlAs material. It operates b/w -10 °C to 50°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise optical emission in a wide temperature range.
STH61008N by Infineon Technologies

STH61008N

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -40 Cel; Maximum Forward Current: .12 A;
NX8571SC770-BA-AZ by Renesas Electronics

NX8571SC770-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Peak Wavelength (nm): 1577; Maximum Operating Temperature: 70 Cel; Semiconductor Material: InGaAsP;