Onsemi - DL-LS1068

  1. Home
  2. Onsemi - DL-LS1068
DL-LS1068 by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number DL-LS1068
Description LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Peak Wavelength (nm): 658; Maximum Forward Current: .11 A; Maximum Forward Voltage: 3 V; Minimum Operating Temperature: -10 Cel;
Datasheet DL-LS1068 Datasheet
In Stock2,167
NAME DESCRIPTION
Optoelectronic Type: LASER DIODE
Maximum Forward Current: .11 A
Peak Wavelength (nm): 658
Maximum Operating Temperature: 70 Cel
Sub-Category: Laser Diodes
Maximum Forward Voltage: 3 V
Minimum Operating Temperature: -10 Cel
Mounting Feature: THROUGH HOLE MOUNT
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
2,167 - -

Popular Products

Category Top Products

DL-3150-103 by Onsemi

DL-3150-103

Onsemi

DL-3150-103 by Onsemi is a LASER DIODE with peak wavelength of 790nm. It has max forward current of 0.06A and voltage of 2.3V, suitable for THROUGH HOLE MOUNT applications in temp range -10 to 70 °C.
SPLPL90-0 by Infineon Technologies

SPLPL90-0

Infineon Technologies

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Terminal Finish: Tin/Lead (Sn/Pb); Peak Wavelength (nm): 905; Semiconductor Material: InGaAs/GaAs; Spectral Bandwidth: 3 m;
NX8571SC845-BA-AZ by Renesas Electronics

NX8571SC845-BA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1584; Maximum Forward Voltage: 2.5 V;
NX8562LF671-BA-A by Renesas Electronics

NX8562LF671-BA-A

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .3 A; Peak Wavelength (nm): 1567;
TOLD9211(F) by Toshiba

TOLD9211(F)

Toshiba

LASER DIODE; Nominal Output Power: 5 W; Peak Wavelength (nm): 670; No. of Functions: 1;
NX7338BF-AA-AZ by Renesas Electronics

NX7338BF-AA-AZ

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Spectral Bandwidth: 4.5 m; Maximum Operating Temperature: 60 Cel; Peak Wavelength (nm): 1310; Maximum Response Time: .000000001 s;
NX8563LB437-CA by Renesas Electronics

NX8563LB437-CA

Renesas Electronics

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Forward Voltage: 1.5 V; Minimum Operating Temperature: -20 Cel; Maximum Operating Temperature: 65 Cel; Maximum Forward Current: .3 A;
NX8562LF549-BA-AZ by Renesas Electronics

NX8562LF549-BA-AZ

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1555; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: GaAs; Maximum Operating Temperature: 70 Cel;
TOLD323CCA by Toshiba

TOLD323CCA

Toshiba

LASER DIODE; Mounting Feature: THROUGH HOLE MOUNT; Maximum Operating Temperature: 80 Cel; Maximum Response Time: .000000001 s; Maximum Forward Current: .15 A; Minimum Operating Temperature: -30 Cel;
NX8571SA622-BA by Renesas Electronics

NX8571SA622-BA

Renesas Electronics

LASER DIODE; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .01 A; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel; Peak Wavelength (nm): 1562;
NX8562LB295-CA by Renesas Electronics

NX8562LB295-CA

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Forward Voltage: 1.5 V; Maximum Forward Current: .3 A; Semiconductor Material: InGaAsP; Minimum Operating Temperature: -20 Cel;
CQF25A/D13 by NXP Semiconductors

CQF25A/D13

NXP Semiconductors

CQF25A/D13 by NXP Semiconductors is a high-performance laser diode with a peak wavelength of 820 nm and a max forward current of 0.15 A. It operates b/w -10 °C to 60 °C, making it ideal for various optoelectronic applications. With an ultra-fast response time of 0.5 ns, it's perfect for precision tasks.
NX8567SAM541-BC by Renesas Electronics

NX8567SAM541-BC

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1554; Maximum Response Time: .000000000125 s;
DL-3148-025 by Onsemi

DL-3148-025

Onsemi

DL-3148-025 by Onsemi is a LASER DIODE with peak wavelength of 635nm. It has max forward current of 0.045A and voltage of 2.4V, suitable for THROUGH HOLE MOUNT applications. Operating temp range from -10 °C to 40°C makes it ideal for various optoelectronic projects.
SDL3038-011 by Onsemi

SDL3038-011

Onsemi

SDL3038-011 by Onsemi is a 640nm LASER DIODE with AlGaInP material. It operates b/w -10 °C to 40°C, featuring THROUGH HOLE MOUNT. Ideal for applications requiring precise laser technology in various industries.
NX8563LAS517-CD-A by Renesas Electronics

NX8563LAS517-CD-A

Renesas Electronics

LASER DIODE; Maximum Forward Voltage: 2 V; Maximum Response Time: .00000000012 s; Maximum Operating Temperature: 85 Cel; Semiconductor Material: InGaAsP; Peak Wavelength (nm): 1552;
NX8565LE870-CC by Renesas Electronics

NX8565LE870-CC

Renesas Electronics

LASER DIODE; Mounting Feature: SURFACE MOUNT; Maximum Operating Temperature: 70 Cel; Peak Wavelength (nm): 1587; Minimum Operating Temperature: -20 Cel; Maximum Forward Current: .1 A;
NX8567SA417-BC by Renesas Electronics

NX8567SA417-BC

Renesas Electronics

LASER DIODE; Peak Wavelength (nm): 1541; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Current: .15 A; Maximum Response Time: .000000000125 s;
SFH4231 by Infineon Technologies

SFH4231

Infineon Technologies

Infineon's SFH4231 Laser Diode operates at 920nm peak wavelength with 1A max forward current. Ideal for surface mount applications, it has a spectral bandwidth of 1m and can withstand temperatures from -40 to 85°C.
NX8571SC346D-BA by Renesas Electronics

NX8571SC346D-BA

Renesas Electronics

LASER DIODE; Minimum Operating Temperature: -5 Cel; Maximum Operating Temperature: 70 Cel; Maximum Forward Voltage: 2.5 V; Peak Wavelength (nm): 1534; Semiconductor Material: InGaAsP;