Onsemi - ECH8616-TL-E

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ECH8616-TL-E by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ECH8616-TL-E
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 3 A; Moisture Sensitivity Level (MSL): 1;
Datasheet ECH8616-TL-E Datasheet
In Stock389
NAME DESCRIPTION
Maximum Power Dissipation (Abs): 1.5 W
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 3 A
Maximum Drain Current (Abs) (ID): 3 A
Sub-Category: FET General Purpose Power
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Terminal Finish: Tin/Bismuth (Sn/Bi)
JESD-609 Code: e6
Moisture Sensitivity Level (MSL): 1
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