Onsemi - ECH8668-TL-H

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ECH8668-TL-H by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number ECH8668-TL-H
Description N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): 7.5 A; JESD-609 Code: e6; Maximum Pulsed Drain Current (IDM): 40 A;
Datasheet ECH8668-TL-H Datasheet
In Stock573
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 7.5 A
Maximum Pulsed Drain Current (IDM): 40 A
Polarity or Channel Type: N-CHANNEL AND P-CHANNEL
Surface Mount: YES
Terminal Finish: TIN BISMUTH
JESD-609 Code: e6
No. of Terminals: 8
Minimum DS Breakdown Voltage: 20 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Peak Reflow Temperature (C): 260
Maximum Drain-Source On Resistance: .017 ohm
Moisture Sensitivity Level (MSL): 1
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