Onsemi - EFC4621R-TR

  1. Home
  2. Onsemi - EFC4621R-TR
EFC4621R-TR by Onsemi

Image shown is a representation only.

Manufacturer Onsemi
Manufacturer's Part Number EFC4621R-TR
Description N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.6 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Maximum Drain Current (Abs) (ID): 9 A;
Datasheet EFC4621R-TR Datasheet
In Stock1,568
NAME DESCRIPTION
Other Names: 488-EFC4621R-TR
2156-EFC4621R-TR-OS
EFC4621R-TR-ND
ONSONSEFC4621R-TR
488-EFC4621R-TRCT
488-EFC4621R-TRDKR
Maximum Power Dissipation (Abs): 1.6 W
Maximum Time At Peak Reflow Temperature (s): 30
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Maximum Operating Temperature: 150 Cel
Maximum Drain Current (ID): 9 A
Maximum Drain Current (Abs) (ID): 9 A
Sub-Category: FET General Purpose Power
Peak Reflow Temperature (C): 260
Polarity or Channel Type: N-CHANNEL
Surface Mount: YES
Moisture Sensitivity Level (MSL): 1
Plant 5!
Your quote plants 5 trees.

Pricing (USD)

Qty. Unit Price Ext. Price
1,568 $0.201 $315.168

Popular Products

Category Top Products

FDBL86062_F085 by Fairchild Semiconductor

FDBL86062_F085

Fairchild Semiconductor

Fairchild Semiconductor's FDBL86062_F085 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 300A Drain Current. Ideal for SWITCHING applications, it features an EAS of 352mJ, 0.002 ohm On Resistance, and operates in ENHANCEMENT MODE.
FDB035N10A by Onsemi

FDB035N10A

Onsemi

FDB035N10A by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features 120A Max Drain Current, 0.0035 ohm Max RDS(on), and 333W Max Power Dissipation. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a built-in DIODE, suitable for high-power requirements.
IRF7205TRPBF by Infineon Technologies

IRF7205TRPBF

Infineon Technologies

IRF7205TRPBF by Infineon is a P-CHANNEL FET with 30V DS Breakdown Voltage, 4.6A Drain Current, and 0.07 ohm On Resistance. Ideal for SWITCHING applications in small outline packages, it operates in ENHANCEMENT MODE up to 150°C with GULL WING terminals.
BSL302SNH6327XTSA1 by Infineon Technologies

BSL302SNH6327XTSA1

Infineon Technologies

Infineon Technologies' BSL302SNH6327XTSA1 is a N-CHANNEL Power FET with a min DS Breakdown Voltage of 30V. It has a max Pulsed Drain Current of 28A and an Avalanche Energy Rating of 30mJ. This FET is commonly used in applications requiring high power and efficient switching capabilities.
SI4946BEY-T1-E3 by Vishay Siliconix

SI4946BEY-T1-E3

Vishay Siliconix

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 3.7 W; Maximum Drain-Source On Resistance: .041 ohm; JESD-30 Code: R-PDSO-G8;
IRF640 by STMicroelectronics

IRF640

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; Package Style (Meter): FLANGE MOUNT;
IRF640 by Samsung

IRF640

Samsung

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Maximum Turn Off Time (toff): 140 ns; Transistor Application: SWITCHING;
IRF540NLPBF by Infineon Technologies

IRF540NLPBF

Infineon Technologies

Infineon's IRF540NLPBF is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features 110A IDM, 185mJ EAS, and 0.044 ohm RDS(on). With a max power dissipation of 130W and operating temperature of 175°C, it offers reliable performance in various electronic systems.
IRLML6402PBF by International Rectifier

IRLML6402PBF

International Rectifier

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Maximum Drain Current (Abs) (ID): 3.7 A; JESD-30 Code: R-PDSO-G3;
VNP35N07-E by STMicroelectronics

VNP35N07-E

STMicroelectronics

VNP35N07-E by STMicroelectronics is a 60V N-CHANNEL FET with 35A ID and 0.035 ohm RDS(on). It operates in ENHANCEMENT MODE, with max power dissipation of 40W. Ideal for automotive applications due to AEC-Q101 standard compliance.
AUIRF5210STRL by Infineon Technologies

AUIRF5210STRL

Infineon Technologies

AUIRF5210STRL by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling 140A pulsed drain current and dissipating up to 170W power. This MOSFET operates in enhancement mode at temperatures up to 150°C, making it suitable for automotive and industrial use.
IRF7425TRPBF-1 by Infineon Technologies

IRF7425TRPBF-1

Infineon Technologies

IRF7425TRPBF-1 by Infineon is a P-channel Power FET with 20V DS breakdown voltage, 15A max drain current, and 0.0082 ohm RDS(on). It's used in power management applications due to its small outline package, 60A pulsed drain current, and -55 to +150°C operating temperature range.
SUD50P08-25L-E3 by Vishay Intertechnology

SUD50P08-25L-E3

Vishay Intertechnology

Vishay Intertechnology's SUD50P08-25L-E3 is a P-CHANNEL FET with 80V DS Breakdown Voltage, 40A IDM, and 0.0252 ohm RDS(ON). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max temp of 175°C.
FQB47P06TM-AM002 by Onsemi

FQB47P06TM-AM002

Onsemi

FQB47P06TM-AM002 by Onsemi is a P-CHANNEL Power FET with 60V DS Breakdown Voltage, 188A IDM, and 0.026 ohm RDS. Ideal for SWITCHING applications due to its ENHANCEMENT MODE operation and built-in DIODE. Features include 820mJ EAS, 160W Pdiss, and -55 to +175°C Temp Range.
IRFZ44NS by International Rectifier Hirel Products

IRFZ44NS

International Rectifier Hirel Products

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Operating Mode: ENHANCEMENT MODE; Transistor Element Material: SILICON; Terminal Position: SINGLE;
BSC060N10NS3G by Infineon Technologies

BSC060N10NS3G

Infineon Technologies

BSC060N10NS3G by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage, 360A IDM, and 0.006 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 125W. This PLASTIC/EPOXY transistor has a small outline package style and can withstand temperatures up to 150°C.
FQP3P50 by Fairchild Semiconductor

FQP3P50

Fairchild Semiconductor

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; No. of Terminals: 3; Transistor Application: SWITCHING;
MSC035SMA170B4 by Microsemi

MSC035SMA170B4

Microsemi

Power Field-Effect Transistors;
FDMS86163P by Onsemi

FDMS86163P

Onsemi

FDMS86163P by Onsemi is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 100A and EAS of 486mJ, operating in ENHANCEMENT MODE. With a package style of SMALL OUTLINE and -55 to 150 °C temperature range, it offers high performance in power management systems.
IRLML0040TRPBF by International Rectifier

IRLML0040TRPBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; Terminal Form: GULL WING; JEDEC-95 Code: TO-236AB;