EFC4C012NLTDG by Onsemi | Transistors

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Manufacturer	Onsemi
Manufacturer's Part Number	EFC4C012NLTDG
Description	N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; No. of Elements: 1; Transistor Application: SWITCHING;
Datasheet	EFC4C012NLTDG Datasheet
In Stock	1,339

NAME	DESCRIPTION
Package Body Material:	PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s):	NOT SPECIFIED
Configuration:	COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material:	SILICON
Field Effect Transistor Technology:	METAL-OXIDE SEMICONDUCTOR
Transistor Application:	SWITCHING
Maximum Turn On Time (ton):	4700 ns
Polarity or Channel Type:	N-CHANNEL
Surface Mount:	YES
No. of Terminals:	6
Maximum Power Dissipation (Abs):	2.5 W
Terminal Position:	BOTTOM
Package Style (Meter):	CHIP CARRIER
Maximum Turn Off Time (toff):	31700 ns
JESD-30 Code:	R-PBCC-N6
No. of Elements:	1
Package Shape:	RECTANGULAR
Terminal Form:	NO LEAD
Operating Mode:	DEPLETION MODE
Maximum Operating Temperature:	150 Cel
Peak Reflow Temperature (C):	NOT SPECIFIED

Pricing (USD)

Qty.	Unit Price	Ext. Price
1,339	$0.997	$1,334.983

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