Onsemi - EMC2DXV5T5G

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EMC2DXV5T5G by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number EMC2DXV5T5G
Description NPN AND PNP; Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; Maximum Collector-Emitter Voltage: 50 V;
Datasheet EMC2DXV5T5G Datasheet
In Stock627
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Collector Current (IC): .1 A
Configuration: CASCADED, 2 ELEMENTS WITH BUILT-IN RESISTOR
Transistor Element Material: SILICON
Transistor Application: SWITCHING
Sub-Category: BIP General Purpose Small Signal
Polarity or Channel Type: NPN AND PNP
Surface Mount: YES
Minimum DC Current Gain (hFE): 60
Terminal Finish: TIN
JESD-609 Code: e3
No. of Terminals: 5
Qualification: Not Qualified
Maximum Power Dissipation (Abs): .5 W
Maximum Collector-Emitter Voltage: 50 V
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F5
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Additional Features: BUILT-IN BIAS RESISTOR RATIO IS 1
Peak Reflow Temperature (C): 260
Moisture Sensitivity Level (MSL): 1
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