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Manufacturer | Onsemi |
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Manufacturer's Part Number | FCH041N60F-F085 |
Description | N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 595 W; Peak Reflow Temperature (C): NOT SPECIFIED; Operating Mode: ENHANCEMENT MODE; |
Datasheet | FCH041N60F-F085 Datasheet |
In Stock | 408 |
NAME | DESCRIPTION |
---|---|
Package Body Material: | PLASTIC/EPOXY |
Maximum Time At Peak Reflow Temperature (s): | NOT SPECIFIED |
Configuration: | SINGLE WITH BUILT-IN DIODE |
Transistor Element Material: | SILICON |
Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
Transistor Application: | SWITCHING |
Maximum Turn On Time (ton): | 242 ns |
Maximum Drain Current (ID): | 76 A |
Surface Mount: | NO |
No. of Terminals: | 3 |
Maximum Power Dissipation (Abs): | 595 W |
Terminal Position: | SINGLE |
Package Style (Meter): | FLANGE MOUNT |
Maximum Turn Off Time (toff): | 514 ns |
JESD-30 Code: | R-PSFM-T3 |
No. of Elements: | 1 |
Package Shape: | RECTANGULAR |
Terminal Form: | THROUGH-HOLE |
Operating Mode: | ENHANCEMENT MODE |
Maximum Operating Temperature: | 150 Cel |
Maximum Drain-Source On Resistance: | .041 ohm |
Avalanche Energy Rating (EAS): | 2025 mJ |
JEDEC-95 Code: | TO-247 |
Polarity or Channel Type: | N-CHANNEL |
Minimum Operating Temperature: | -55 Cel |
Minimum DS Breakdown Voltage: | 600 V |
Reference Standard: | AEC-Q101 |
Maximum Drain Current (Abs) (ID): | 76 A |
Peak Reflow Temperature (C): | NOT SPECIFIED |