Onsemi - FCH077N65F-F085

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FCH077N65F-F085 by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FCH077N65F-F085
Description N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 481 W; Maximum Turn On Time (ton): 148 ns; Reference Standard: AEC-Q101;
Datasheet FCH077N65F-F085 Datasheet
In Stock1,336
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 148 ns
Maximum Drain Current (ID): 54 A
Surface Mount: NO
No. of Terminals: 3
Maximum Power Dissipation (Abs): 481 W
Terminal Position: SINGLE
Package Style (Meter): FLANGE MOUNT
Maximum Turn Off Time (toff): 237 ns
JESD-30 Code: R-PSFM-T3
No. of Elements: 1
Package Shape: RECTANGULAR
Terminal Form: THROUGH-HOLE
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .077 ohm
Avalanche Energy Rating (EAS): 1128 mJ
Maximum Feedback Capacitance (Crss): 194 pF
JEDEC-95 Code: TO-247
Polarity or Channel Type: N-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 650 V
Reference Standard: AEC-Q101
Maximum Drain Current (Abs) (ID): 54 A
Peak Reflow Temperature (C): NOT SPECIFIED
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Pricing (USD)

Qty. Unit Price Ext. Price
1,336 $4.380 $5,851.680

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