Onsemi - FDC6304P

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FDC6304P by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDC6304P
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .9 W; JESD-609 Code: e3; Maximum Drain Current (Abs) (ID): .46 A;
Datasheet FDC6304P Datasheet
In Stock2,805
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): .46 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: MATTE TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .9 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-G6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: GULL WING
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.5 ohm
Moisture Sensitivity Level (MSL): 1
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 25 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): .46 A
Peak Reflow Temperature (C): 260
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Pricing (USD)

Qty. Unit Price Ext. Price
2,805 $0.232 $650.760

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