Onsemi - FDMA1029PZ

FDMA1029PZ by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMA1029PZ
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.4 W; Maximum Operating Temperature: 150 Cel; Maximum Drain-Source On Resistance: .095 ohm;
Datasheet FDMA1029PZ Datasheet
In Stock1,919
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 3.1 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: NICKEL PALLADIUM GOLD
No. of Terminals: 6
Maximum Power Dissipation (Abs): 1.4 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: S-PDSO-N6
No. of Elements: 2
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .095 ohm
Moisture Sensitivity Level (MSL): 1
JEDEC-95 Code: MO-229VCCC
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e4
Minimum DS Breakdown Voltage: 20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 3.1 A
Peak Reflow Temperature (C): 260
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