Onsemi - FDMC510P-T

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FDMC510P-T by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMC510P-T
Description P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 41 W; Maximum Pulsed Drain Current (IDM): 50 A; No. of Terminals: 5;
Datasheet FDMC510P-T Datasheet
In Stock790
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Configuration: SINGLE WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 82 ns
Maximum Drain Current (ID): 18 A
Maximum Pulsed Drain Current (IDM): 50 A
Surface Mount: YES
No. of Terminals: 5
Maximum Power Dissipation (Abs): 41 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
Maximum Turn Off Time (toff): 812 ns
JESD-30 Code: S-PDSO-N5
No. of Elements: 1
Package Shape: SQUARE
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .008 ohm
Avalanche Energy Rating (EAS): 37 mJ
Maximum Feedback Capacitance (Crss): 1110 pF
Polarity or Channel Type: P-CHANNEL
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: 20 V
Maximum Drain Current (Abs) (ID): 18 A
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