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| Manufacturer | Onsemi |
|---|---|
| Manufacturer's Part Number | FDMD8260LET60 |
| Description | N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 44 W; Moisture Sensitivity Level (MSL): 1; Maximum Pulsed Drain Current (IDM): 304 A; |
| Datasheet | FDMD8260LET60 Datasheet |
| In Stock | 11,306 |
| NAME | DESCRIPTION |
|---|---|
| Package Body Material: | PLASTIC/EPOXY |
| Maximum Time At Peak Reflow Temperature (s): | 30 |
| Configuration: | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE |
| Transistor Element Material: | SILICON |
| Field Effect Transistor Technology: | METAL-OXIDE SEMICONDUCTOR |
| Transistor Application: | SWITCHING |
| Maximum Turn On Time (ton): | 41 ns |
| Maximum Drain Current (ID): | 67 A |
| Maximum Pulsed Drain Current (IDM): | 304 A |
| Surface Mount: | YES |
| Terminal Finish: | MATTE TIN |
| No. of Terminals: | 12 |
| Maximum Power Dissipation (Abs): | 44 W |
| Terminal Position: | DUAL |
| Package Style (Meter): | SMALL OUTLINE |
| Maximum Turn Off Time (toff): | 94 ns |
| JESD-30 Code: | R-PDSO-N12 |
| No. of Elements: | 2 |
| Package Shape: | RECTANGULAR |
| Terminal Form: | NO LEAD |
| Operating Mode: | ENHANCEMENT MODE |
| Maximum Operating Temperature: | 175 Cel |
| Case Connection: | DRAIN SOURCE |
| Maximum Drain-Source On Resistance: | .0058 ohm |
| Moisture Sensitivity Level (MSL): | 1 |
| Avalanche Energy Rating (EAS): | 181 mJ |
| Maximum Feedback Capacitance (Crss): | 50 pF |
| Polarity or Channel Type: | N-CHANNEL |
| JESD-609 Code: | e3 |
| Minimum Operating Temperature: | -55 Cel |
| Minimum DS Breakdown Voltage: | 60 V |
| Maximum Drain Current (Abs) (ID): | 67 A |
| Peak Reflow Temperature (C): | 260 |
