Onsemi - FDMS3606AS

FDMS3606AS by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDMS3606AS
Description N-CHANNEL; Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Feedback Capacitance (Crss): 75 pF; Package Body Material: PLASTIC/EPOXY;
Datasheet FDMS3606AS Datasheet
In Stock14,012
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 1.3 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Tin (Sn)
No. of Terminals: 7
Maximum Power Dissipation (Abs): 2.5 W
Terminal Position: QUAD
Package Style (Meter): FLATPACK
JESD-30 Code: R-PQFP-N7
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN SOURCE
Maximum Drain-Source On Resistance: .008 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 75 pF
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 30 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): 40 A
Peak Reflow Temperature (C): 260
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