Onsemi - FDPC8016S

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FDPC8016S by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDPC8016S
Description N-CHANNEL; Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 42 W; Maximum Pulsed Drain Current (IDM): 75 A; Maximum Drain Current (ID): 20 A;
Datasheet FDPC8016S Datasheet
In Stock9,253
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Drain Current (ID): 20 A
Maximum Pulsed Drain Current (IDM): 75 A
Sub-Category: FET General Purpose Power
Surface Mount: YES
Terminal Finish: Matte Tin (Sn) - annealed
No. of Terminals: 8
Maximum Power Dissipation (Abs): 42 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-N8
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: NO LEAD
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Case Connection: DRAIN
Maximum Drain-Source On Resistance: .0038 ohm
Moisture Sensitivity Level (MSL): 1
Avalanche Energy Rating (EAS): 73 mJ
Polarity or Channel Type: N-CHANNEL
JESD-609 Code: e3
Minimum DS Breakdown Voltage: 25 V
Maximum Drain Current (Abs) (ID): 100 A
Peak Reflow Temperature (C): 260
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