Onsemi - FDY1002PZ

FDY1002PZ by Onsemi

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Manufacturer Onsemi
Manufacturer's Part Number FDY1002PZ
Description P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .625 W; Package Body Material: PLASTIC/EPOXY; Terminal Form: FLAT;
Datasheet FDY1002PZ Datasheet
In Stock17,858
NAME DESCRIPTION
Package Body Material: PLASTIC/EPOXY
Maximum Time At Peak Reflow Temperature (s): 30
Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
Transistor Element Material: SILICON
Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR
Transistor Application: SWITCHING
Maximum Turn On Time (ton): 47 ns
Maximum Drain Current (ID): -.83 A
Maximum Pulsed Drain Current (IDM): -1 A
Sub-Category: Other Transistors
Surface Mount: YES
Terminal Finish: TIN
No. of Terminals: 6
Maximum Power Dissipation (Abs): .625 W
Terminal Position: DUAL
Package Style (Meter): SMALL OUTLINE
JESD-30 Code: R-PDSO-F6
No. of Elements: 2
Package Shape: RECTANGULAR
Terminal Form: FLAT
Operating Mode: ENHANCEMENT MODE
Maximum Operating Temperature: 150 Cel
Maximum Drain-Source On Resistance: 1.8 ohm
Moisture Sensitivity Level (MSL): 1
Maximum Feedback Capacitance (Crss): 30 pF
Polarity or Channel Type: P-CHANNEL
JESD-609 Code: e3
Minimum Operating Temperature: -55 Cel
Minimum DS Breakdown Voltage: -20 V
Qualification: Not Qualified
Maximum Drain Current (Abs) (ID): -.83 A
Peak Reflow Temperature (C): 260
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